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Optical study of intersubband transitions in GaSb/AlGaSb systems for QWIPsFERRINI, R; GUIZZETTI, G; PATRINI, M et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 351-354, issn 0925-3467Conference Paper

Vertically stacked quantum dots grown by ALMBE and MBEFRIGERI, P; BOSACCHI, A; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 201202, pp 1136-1138, issn 0022-0248Conference Paper

Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBOSACCHI, A; COLONNA, F; FRANCHI, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 185-189, issn 0022-0248, 1Conference Paper

Light-induced reactivation of shallow acceptors in hydrogenated n-type Al_xGa_1-xAsAIROLDI, M; GRILLI, E; GUZZI, M et al.Physica status solidi. A. Applied research. 1994, Vol 144, Num 2, pp 401-413, issn 0031-8965Article

Coexistence of the DX center and other Si-related electron bound states in Al_xGa_1-xAsBARALDI, A; FRIGERI, P; GHEZZI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 412-415, issn 0921-5107Conference Paper

Low temperature thermoreflectance of Al_xGa_1-xAs/GaAs quantum wellsBELLANI, V; GUIZZETTI, G; NOSENZO, L et al.Superlattices and microstructures. 1993, Vol 13, Num 2, pp 147-152, issn 0749-6036Article

Evidence for non-equilibrium free electron density in AlGaAs at low temperaturesGHEZZI, C; MOSCA, R; BOSACCHI, A et al.Solid state communications. 1991, Vol 78, Num 2, pp 159-162, issn 0038-1098, 4 p.Article

The influence of the DX center on the capacitance of Schottky barriers in N-type AlGaAsGHEZZI, C; MOSCA, R; BOSACCHI, A et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 400-404, issn 0169-4332, 5 p.Conference Paper

Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs(MBE) Schottky barriersBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.FRANCHI, S; Electronics Letters. 1993, Vol 29, Num 8, pp 651-653, issn 0013-5194Article

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emissionTREVISI, G; SERAVALLI, L; FRIGERI, P et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 465-468, issn 0959-8324, 4 p.Conference Paper

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Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layersFERRARI, C; GENNARI, S; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 205, Num 4, pp 474-480, issn 0022-0248Article

Infrared reflectance study of n-type GaSb epitaxial layersFERRINI, R; GUIZZETTI, G; PATRINI, M et al.Solid state communications. 1997, Vol 104, Num 12, pp 747-751, issn 0038-1098Article

Continuously graded buffers for InGaAs/GaAs structures grown on GaAsBOSACCHI, A; DE RICCARDIS, A. C; ROMANATO, F et al.Journal of crystal growth. 1997, Vol 175-76, pp 1009-1015, issn 0022-0248, 2Conference Paper

Electrical behaviour of epitaxial Al/n-Al_0.25Ga_0.75As junctions: effect of the composition of undoped Al_xGa_1-xAs cap layerHORVATH, ZS; BOSACCHI, A; FRANCHI, S et al.Vacuum. 1995, Vol 46, Num 8-10, pp 959-961, issn 0042-207XConference Paper

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctionsHORVATH, ZS. J; BOSACCHI, A; FRANCHI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 429-432, issn 0921-5107Conference Paper